Search results for "Electron mobility"

Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device

2020

In this work, we fabricated a 2D van der Waals heterostructure device in an inert nitrogen atmosphere by means of a dry transfer technique in order to obtain a clean and largely impurity free stack of hexagonal boron nitride (hBN)-encapsulated few-layer graphene. The heterostructure was contacted from the top with gold leads on two sides, and the device’s properties including intrinsic charge carrier density, mobility, and contact resistance were studied as a function of temperature from 4 K to 270 K. We show that the contact resistance of the device mainly originates from the metal/graphene interface, which contributes a significant part to the total resistance. We demonstrate that current…

Photo-electrical and transport properties of hydrothermal ZnO

2016

We performed the studies of optical, photoelectric, and transport properties of a hydrothermal bulk n-type ZnO crystal by using the contactless optical techniques: photoluminescence, light-induced transient grating, and differential reflectivity. Optical studies revealed bound exciton and defect-related transitions between the donor states (at ∼60 meV and ∼240 meV below the conduction band) and the deep acceptor states (at 0.52 eV above the valence band). The acceptor state was ascribed to VZn, and its thermal activation energy of 0.43 eV was determined. A low value of carrier diffusion coefficient (∼0.1 cm2/s) at low excitations and temperatures up to 800 K was attributed to impact the rec…

Attosecond Soft-X-Ray Spectroscopy in a Transition Metal Dichalcogenide

2019

Information about the real-time response of carriers to optical fields is paramount to advance information processing or to understand the bottlenecks of light-matter interaction and energy harvesting. Transition-metal dichalcogenide (TMDC) compounds are an emerging class of materials with attractive structural and electronic properties that can be thinned to the 2D limit and TiS 2 is a paradigmatic example for a semi-metallic TMDC, since its electron mobility ranges between that of a metal and a semiconductor.

Photoconductivity in the columnar phases of a glassy discotic twin

1995

Mechanism of self-trapped hole motion in corundum crystals

1993

Abstract Atomistic simulations of the self-trapped hole eauilibrium geometry and migration in a pure corundum crystal have been carried out using the semiempirical method of intermedia te neglect of differential overlap and atom-atom potentials, as implemented in the CASCADE code. The activation energies for three different hole-hopping mechanisms are calculated. It is shown that the 60° reorientations of a self-trapped hole and hopping to the nearest O-atom triangle reauire almost the same activation energy, approximately 0.9 eV, which agrees auite well with the experi-mental value for hole migration of 0.7 eV. A new mechanism of small-polaron motion is suggested.

Role of photoactive layer morphology in high fill factor all-polymer bulk heterojunction solar cells

2011

We report on the realization of all-polymer solar cells based on blends of poly(3-hexylthiophene-2,5-diyl) (P3HT) as a donor and poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) as an acceptor. High fill factors are demonstrated for the first time in this class of devices suggesting high dissociation efficiency for the bounded electron-hole pairs and balanced electron and hole mobility along the thin films. The use of the high-mobility n-type P(NDI2OD-T2) polymer enables us to overcome one of the problems limiting the efficiency of all-polymer solar cells, resulting in fill factors comparable with those reported for …

Structural, vibrational and electrical study of compressed BiTeBr

2016

Compresed BiTeBr has been studied from a joint experimental and theoretical perspective. Room-temperature x-ray diffraction, Raman scattering, and transport measurements at high pressures have been performed in this layered semiconductor and interpreted with the help of ab initio calculations. A reversible first-order phase transition has been observed above 6–7 GPa, but changes in structural, vibrational, and electrical properties have also been noted near 2 GPa. Structural and vibrational changes are likely due to the hardening of interlayer forces rather than to a second-order isostructural phase transition while electrical changes are mainly attributed to changes in the electron mobilit…

Tuning the semiconducting nature of bis(phthalocyaninato) holmium complexes via peripheral substituents

2012

The semiconducting properties of the heteroleptic and homoleptic bis(phthalocyaninato) holmium complexes bearing electron-withdrawing phenoxy substituents at the phthalocyanine periphery, namely Ho(Pc)[Pc(OPh)8] (1) and Ho[Pc(OPh)8]2 (2) [Pc = unsubstituted phthalocyaninate; Pc(OPh)8 = 2,3,9,10,16,17,23,24-octaphenoxyphthalocyaninate] have been investigated comparatively. Using a solution-based Quasi–Langmuir–Shafer (QLS) method, the thin solid films of the two compounds were fabricated. The structure and properties of the thin films were investigated by UV-vis absorption spectra, X-ray diffraction (XRD) and atomic force microscopy (AFM). Experimental results indicated that H-type molecular…

Measurement of drift mobilities in amorphous organic films using the Time of Flight method

2004

We apply the Time of Flight (TOF) technique to study carrier mobility in N, N’-diphenyl-N,N’-bis(3-methylphenyl) -1,1-biphenyl-4,4’-diamine (TPD) and tris(8-hydroxyquinolato) aluminium (Alq 3 ). These materials are two examples of, respectively, hole and electron transporting molecular materials. Measurements are performed in free air or under vacuum varying the experimental parameters such as laser pulse intensity and single shot irradiation. We observe a transition from dispersive to non dispersive transport changing the experimental conditions.

Analysis of self-trapped hole mobility in alkali halides and metal halides

2017

Support from Latvian National Research Program IMIS2 (2014–2017) and LZP Grant No. 237/2012 (2013–2016) is greatly appreciated.